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0.056UF100V1812

Description

A block diagram illustrates the IC's internal structure (Figure 3a and 3b). A patented sensor- bridge excitation circuit counteracts any decrease in sensitivity by causing the bridge-drive voltage to rise with temperature. The compensated sensor bridge also acts as a temperature sensor, and is sufficiently linear to serve for correcting offset drift vs. temperature.

Applications

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Features

The Hynix 0.056UF100V1812 Series are 16Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy printed circuit board. One 0.22uF and two 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.

Supplier

  • Part Name
  • Q'ty
  • Description
  • Vendor
  • Date Code
  • Date
  • Quotation
  • 0.00150V0805
  • 4000/REEL
  • skype:treesam_xie yahoo messager:treesamxie
  • TDK
  • 2017-10-18

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