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2SK2984-S_1188743 datasheet and pdf

DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
? Low on-resistance RDS(on)1 = 10 m? (MAX.) (VGS = 10 V, ID = 20 A) RDS(on)2 = 15 m? (MAX.) (VGS = 4.5 V, ID = 20 A)? Low Ciss Ciss = 2850 pF TYP.? Built-in gate protection diode

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